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HomeIndustrial & ScientificIndustrial ElectricalSemiconductor ProductsTransistorsHFET Transistors5Pcs Transistor 10N60 N Channel International Rectifier Power Mosfet
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GH₵ 51.00
GH₵ 71.0028%
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Order above GHC 150 on Jumia Express items & get free delivery | regular delivery from GH₵ 3.57 to Tema
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This latest technology has been especially designed to minimize on -state resistance,have a high rugged characteristics. This devices is specially well suited for high efficiency switch power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.Specification:
| Model No. | 10N60 |
| Drain Source Voltage | 600V |
| Drain Current | 10A |
| Package | TO-220F |
| Mounting Hole Diameter | Approx. 3mm |
| Pin Size ( L x Pitch) | Approx. 13 x 2 mm |
| Total Size (L x W x H) | Approx. 29 x 10 x 4mm |
Package Includes:
- 5 x N-Channel MOSFET
N-Channel Power MOSFET 10N60
Specifications
Key Features
- This latest technology has been especially designed to minimize on -state resistance,have a high rugged characteristics. This devices is specially well suited for high efficiency switch power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.Specification:Model No.10N60Drain Source Voltage600VDrain Current10APackageTO-220FMounting Hole DiameterApprox. 3mmPin Size ( L x Pitch)Approx. 13 x 2 mmTotal Size (L x W x H)Approx. 29 x 10 x 4mmPackage Includes:5 x N-Channel MOSFET
- N-Channel Power MOSFET 10N60
- This latest technology has been especially designed to minimize on -state resistance,have a high rugged characteristics. This devices is specially well suited for high efficiency switch power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.Specification:Model No.10N60Drain Source Voltage600VDrain Current10APackageTO-220FMounting Hole DiameterApprox. 3mmPin Size ( L x Pitch)Approx. 13 x 2 mmTotal Size (L x W x H)Approx. 29 x 10 x 4mmPackage Includes:5 x N-Channel MOSFET
- N-Channel Power MOSFET 10N60
- This latest technology has been especially designed to minimize on -state resistance,have a high rugged characteristics. This devices is specially well suited for high efficiency switch power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.Specification:Model No.10N60Drain Source Voltage600VDrain Current10APackageTO-220FMounting Hole DiameterApprox. 3mmPin Size ( L x Pitch)Approx. 13 x 2 mmTotal Size (L x W x H)Approx. 29 x 10 x 4mmPackage Includes:5 x N-Channel MOSFET
What’s in the box
5 x N-Channel MOSFET
Specifications
- SKU: GE779IP2OK1RRNAFAMZ
- Model: N/A
- Production Country: China
- Size (L x W x H cm): 18.79 x 15.79 x 2.85
- Weight (kg): 0.17
- Main Material: N/A
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5Pcs Transistor 10N60 N Channel International Rectifier Power Mosfet
GH₵ 51.00
GH₵ 71.0028%
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